Electronic component and semiconductor device, method of fabricating the same, circuit board mounted with the same, and electronic appliance comprising the circuit board

ABSTRACT

An integrated type semiconductor device that is capable of reducing cost or improving the reliability of connecting semiconductor chips together or chips to a circuit board. One embodiment of such an integrated type semiconductor device comprises a first semiconductor device ( 10 ) having a semiconductor chip ( 12 ) with electrodes ( 16 ), a stress-relieving layer ( 14 ) prepared on the semiconductor chip ( 12 ), a wire ( 18 ) formed across the electrodes ( 16 ) and the stress-relieving layer ( 14 ), and solder balls ( 19 ) formed on the wire ( 18 ) over the stress-relieving layer ( 14 ); and a bare chip ( 20 ) as a second semiconductor device to be electrically connected to the first semiconductor device ( 10 ).

This is a Continuation of application Ser. No. 09/180,225 filed Apr. 22,1999 now U.S. Pat. No. 6,515,370, which in turn is a 371 of APPLN. ofPCT/JP98/00973 filed Mar. 10, 1998. The entire disclosure of the priorapplication(s) is hereby incorporated by reference herein in itsentirety.

TECHNICAL FIELD

The present invention relates to an electronic component and asemiconductor device wherein a plurality of chips are connectedtogether, a method of fabricating the same, a circuit board mounted withthe same, and an electronic appliance comprising the circuit board.

BACKGROUND ART

Semiconductor devices are used in a variety of applications such aslogic devices, memory devices, CPUs, and the like. It is commonplace tointegrate two or more types of electronic circuits into onesemiconductor device. To do this, however, requires redesigning of thesemiconductor device with added cost. It has therefore been commonpractice to connect a plurality of semiconductor chips for a unit of thesemiconductor device. Such a semiconductor device in the prior art isfabricated by merely connecting a plurality of bare chips mounted on acircuit board through soldering bumps prepared on anyone of the barechips.

Accordingly, the prior art such as described above lacked ingenuity inconnecting the bare chips together, or in the mounting of thesemiconductor device onto a circuit board.

For instance, to connect two bare chips together a bonding pad forconnecting electrodes on one of the bare chips must be prepared on theother bare chip. This required redesigning of the bare chip.

Otherwise, when the bare chips were mounted on a circuit board bydirectly connecting any of the bare chips to a circuit board, crackssometimes developed at the connections due to the difference in thethermal expansion coefficients of the bare chip and the circuit board.

Accordingly, with an aim at eliminating the above-described problems ofthe prior art, it is an object of the present invention to provide anelectronic component and a semiconductor device that are capable ofreducing cost or improving reliability in the connecting of chips toeach other or to a circuit board, a method of fabricating the same, acircuit board mounted with the same, and an electronic appliancecomprising the circuit board.

DISCLOSURE OF THE INVENTION

(1) An integrated type semiconductor device of the present inventioncomprises a first semiconductor device having a semiconductor chip withfirst electrodes, a stress relieving structure provided on thesemiconductor chip, a plurality of wires formed from the firstelectrodes, and external electrodes formed on the stress relievingstructure and connected to any ones of the wires; and,

a second semiconductor device having second electrodes arranged with adifferent spacing pitch in comparison with the first electrodes on thefirst semiconductor device, the second semiconductor device beingelectrically connected to any ones of the wires of the firstsemiconductor device.

In accordance with the present invention, the first semiconductor deviceand the second semiconductor device are connected to form an integratedtype semiconductor device. Since the first semiconductor device has astress relieving structure, any stress placed on the external electrodescan be relieved by the stress relieving structure. In other words, whilebonding of the external electrodes of the first semiconductor deviceonto bonding pads or the like of a circuit board could create stress dueto a difference in the thermal expansion coefficient of thesemiconductor chip and the circuit board, such stress is relieved by thestress relieving structure.

Additionally, in preparing electrodes for a semiconductor chip, it isgenerally preferable to design them in the best position for thatparticular chip. In this case, if the electrode positions of thesemiconductor chip in the first semiconductor device differ from thoseof the second semiconductor device having a semiconductor chip withelectrodes located at positions different from the first semiconductorchip, electrodes must be designed so that the electrode positions ofboth units meet together to form an integrated (united) device. However,with the present invention, semiconductor chips with unmatched electrodepositions can be made into an integrated semiconductor device byarranging of the wires as necessary to convert the spacing pitch.

(2) The stress relieving structure may comprise a stress relieving layerprovided on the semiconductor chip, whereas the ones of the wiresconnected to the external electrodes may be formed extending from thefirst electrodes to an area on the stress relieving layer, and theexternal electrodes may be formed on the ones of the wires connected tothe external electrodes on the stress relieving layer.

(3) The stress relieving structure may comprise a stress relieving layerprovided on the semiconductor chip and connecting portions piercingthrough the stress relieving layer and transmitting stress to the stressrelieving layer, whereas the ones of the wires connected to the externalelectrodes may be formed beneath the stress relieving layer, and theexternal electrodes may be formed on the connecting portions.

(4) The second semiconductor device may be a bare chip consisting of asemiconductor chip having the second electrodes and external electrodesprepared on the second electrodes.

In accordance with this description, the second semiconductor device isa so-called bare chip to be connected to the first semiconductor deviceby means of flip chip bonding. Using a bare chip as the secondsemiconductor device such as described above dispenses with additionalprocessing and therefore enables reductions in cost as well asfabrication steps.

(5) The second semiconductor device may comprise a semiconductor chiphaving the second electrodes, a stress relieving layer provided on thesemiconductor chip, and wires formed extending from the secondelectrodes to an area on the stress relieving layer, and externalelectrodes formed on the wires on the stress relieving layer.

In accordance with this description, not only the first semiconductordevice but also the second semiconductor device is enabled to relievestress by a stress relieving layer.

(6) The second semiconductor device may comprise a semiconductor chiphaving the second electrodes, a stress relieving layer provided on thesemiconductor chip, wires formed underneath the stress relieving layerfrom the second electrodes, connecting portions piercing through thestress relieving layer and transmitting stress to the stress relievinglayer, and external electrodes formed on the connecting portions.

(7) The second semiconductor device may comprise wires formed from thesecond electrodes and external electrodes formed on the wires, whereasthe external electrodes of the second semiconductor device may beelectrically connected to the first semiconductor device.

(8) The wires connected to the second semiconductor device may be formedon the semiconductor chip, whereas the second semiconductor device maycomprise wires formed from the second electrodes and external electrodesformed on the wires, and the stress relieving layer may be formed in aregion avoiding at least a part of the ones of the wires connected tothe second semiconductor device.

In accordance with this description, since the stress relieving layer isformed only in a region avoiding at least a portion of the wires, thisreduces the area for forming the stress relieving layer.

(9) The ones of the wires connected to the second semiconductor devicemay be formed on the stress relieving layer, whereas the secondsemiconductor device may comprise wires formed from the secondelectrodes and external electrodes formed on the wires.

In accordance with this description, since the wires connected to thesecond semiconductor device is formed on the stress relieving layer, itcan be made into any desired shape without need for redesigning of thesemiconductor chip. It therefore makes it possible to configure thefirst semiconductor device by utilizing an existing semiconductordevice, thereby avoiding cost increase.

(10) The ones of the wires connected to the second semiconductor devicemay be formed on the semiconductor chip, whereas the secondsemiconductor device may comprise wires formed from the secondelectrodes and external electrodes formed on the wires, and the stressrelieving layer may be formed in a region avoiding at least a part ofthe ones of the wires connected to the second semiconductor device.

(11) The ones of the wires connected to the second semiconductor devicemay be formed on the stress relieving layer, whereas the secondsemiconductor device may comprise wires formed from the secondelectrodes and external electrodes formed on the wires.

(12) The integrated type semiconductor device may further comprise atleast one third semiconductor device electrically connected to the firstsemiconductor device.

In accordance with this method, at least three semiconductor devices canbe connected to form an integrated type semiconductor device.

(13) The integrated type semiconductor device may further comprise aplastic package to seal both the first and second semiconductor devices,and outer leads connected to the first electrodes of the firstsemiconductor device.

Such a semiconductor device is referred to as a resin sealed typedevice.

(14) The first semiconductor device may be equipped with a radiatorattached to a side opposite to a side to which the second semiconductordevice is connected.

Such a configuration provides for heat radiation of semiconductor chipof the first semiconductor device.

(15) An integrated type electronic component of the present inventioncomprises a first electronic component having an element chip with firstelectrodes, a stress relieving structure provided on the element chip, aplurality of wires formed from the first electrodes, and externalelectrodes formed on the stress relieving structure and connected to anyones of the wires; and,

a second electronic component having second electrodes arranged with adifferent spacing pitch in comparison with the first electrodes on thefirst electronic component, the second electronic component beingelectrically connected to any ones of the wires of the first electroniccomponent.

(16) A method of making an integrated type electronic component inaccordance with the present invention comprises steps of electricallyconnecting a second electronic component to a first electronic componenthaving an element chip with first electrodes, a stress relievingstructure provided on the element chip, a plurality of wires formed fromthe first electrodes, and external electrodes formed on the stressrelieving structure and connected to any ones of the wires, theconnection being achieved through any ones of the wires.

(17) A method of making an integrated type semiconductor device inaccordance with the present invention comprises steps of electricallyconnecting a second semiconductor device to a first semiconductor devicehaving a semiconductor chip with first electrodes, a stress relievingstructure provided on the semiconductor chip, a plurality of wiresformed from the first electrodes, and external electrodes formed on thestress relieving structure and connected to any ones of the wires, theconnection being achieved through any ones of the wires.

The aforementioned integrated type semiconductor device can befabricated in accordance with the above steps.

(18) The ones of the wires connected to the second semiconductor devicemay have pads and be formed on the semiconductor chip, whereas thestress relieving structure may comprise a stress relieving layerprovided in a region avoiding the pads, and the second semiconductordevice may possess second electrodes, wires formed from the secondelectrodes, and external electrodes formed on the wires; the externalelectrodes of the second semiconductor device may be connected to thepads of the first semiconductor device.

(19) The stress relieving structure may comprise a stress relievinglayer provided on the semiconductor chip, whereas the ones of the wiresconnected with the second semiconductor device may have pads and beformed on the stress relieving layer, and the second semiconductordevice may possess second electrodes, wires formed from the secondelectrodes, and external electrodes formed on the wires; the externalelectrodes of the second semiconductor device may be connected to thepads of the first semiconductor device.

(20) At least ones of the pads of the first semiconductor device and theexternal electrodes of the second semiconductor device may be made fromsolder having a higher melting point than that used for mounting useonto a circuit board.

The above ensures that the solder bonding the pads and the externalelectrodes does not remelt to break down the bonding, even at atemperature when the solder, used for mounting the integrated typesemiconductor device onto the circuit board, is melted in a reflow step.

(21) The pads of the first semiconductor device and the externalelectrodes of the second semiconductor device may b made from metalhaving a higher melting point than that of solder.

In accordance with this method, the pads and bumps are bonded togetherbetween the metal on the surface of the pads and the metal on thesurface of the external electrodes. Since the melting points of thesemetals are higher than that of solder, the metals bonding the pads andthe external electrodes do not remelt to break down the bonding, even ifthe solder, used for mounting the integrated type semiconductor deviceonto the circuit board, is melted in a reflow step.

(22) Sides of ones of the pads of the first semiconductor device and theexternal electrodes of the second semiconductor device may be made fromsolder and sides of others may be made from metal having a highermelting point than that of solder.

In accordance with this method, when the solder on one of the surfacesis melted to bond the connection, the metal on the other side diffusesinto the solder to raise the solder remelting temperature. This ensuresthat the solder bonding the pads and the external electrodes does notremelt to break down the bonding, even at a temperature when the solder,used for mounting the integrated type semiconductor device onto thecircuit board, is melted in a reflow step.

(23) Between the pads of the first semiconductor device and the externalelectrodes of the second semiconductor device, an anisotropic conductivelayer containing thermosetting adhesive may be placed, and the externalelectrodes of the second semiconductor device and the pads of the firstsemiconductor device may be bonded through the anisotropic conductivelayer.

In accordance with this method, since the anisotropic conductive layercontains thermosetting adhesive, which hardens at a temperature when thesolder, used for mounting the integrated type semiconductor device ontothe circuit board, is melted in a reflow step, the bonding between thepads and the external electrodes is prevented from breaking down.

(24) On a circuit board of the present invention, the aforementionedintegrated type semiconductor device is mounted.

(25) An electronic appliance according to the present inventioncomprises the aforementioned circuit board.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a semiconductor device in accordance with the firstembodiment.

FIG. 2 shows a circuit board mounted with a semiconductor device inaccordance with the second embodiment.

FIG. 3 shows a circuit board mounted with a semiconductor device inaccordance with the third embodiment.

FIGS. 4A and 4B show a semiconductor device in accordance with thefourth embodiment.

FIG. 5 shows a semiconductor device in accordance with the fifthembodiment.

FIG. 6 shows a semiconductor device in accordance with the sixthembodiment.

FIG. 7 shows a semiconductor device in accordance with the seventhembodiment.

FIG. 8 is a drawing showing the steps of fabricating a semiconductordevice in accordance with the present invention.

FIG. 9 illustrates the steps of fabricating a semiconductor device inaccordance with the present invention.

FIG. 10 also illustrates the steps of fabricating a semiconductor devicein accordance with the present invention.

FIG. 11 continues to illustrate the steps of fabricating a semiconductordevice in accordance with the present invention.

FIG. 12 is an example of a variation of the individual semiconductordevices constituting an integrated type semiconductor device.

FIG. 13 is also an example of a variation of the individualsemiconductor devices constituting an integrated type semiconductordevice.

FIG. 14 is another example of variation of individual semiconductordevices constituting an integrated type semiconductor device.

FIG. 15 illustrates a circuit board mounted with a semiconductor devicein accordance with the present invention.

FIG. 16 illustrates an electronic appliance equipped with a circuitboard mounted with a semiconductor device in accordance with the presentinvention.

BEST MODE FOR CARRYING OUT THE INVENTION

In the following sections, preferred embodiments of the presentinvention are explained in more detail referring to the illustrativefigures.

First Embodiment

FIG. 1 shows a semiconductor device in accordance with the firstembodiment. The semiconductor device 1 is an integrated type devicecomprising a semiconductor device 10 and a bare chip 20 as asemiconductor device.

The semiconductor device 10 has a stress relieving layer 14 provided onthe surface having an electrode 16 of a semiconductor chip 12 and in theregion avoiding the electrode 16, while a wire 18 is wrapped around theelectrode 16 and the stress relieving layer 14. On top of the wire 18 asolder ball 19 is formed. Since the solder ball 19 can be formed at adesired position on the wire 18, the spacing pitch can be easilyconverted from that of the electrode 16 to any desired pitch. Therefore,the pitch conversion for external terminals is easily accomplished.

In addition, as the stress relieving layer 14, materials having a lowYoung's modulus capable of relieving stress are used. For suchmaterials, polyimide resins, silicone-modified polyimide resins, epoxyresins, silicone-modified epoxy resins, and the like can be mentioned asexamples. Accordingly, the stress relieving layer 14 can relieve outsidestress applied to the solder ball 19.

Furthermore, an electrode 22 of the bare chip 20 is connected to thesolder ball 19. Note that the solder ball 19 may be formed beforehand onthe electrode 16 of the semiconductor device 10, or alternatively, onthe electrode 22 of the bare chip 20. In this regard, an electricalconnection between the semiconductor device 10 and the bare chip 20 ispossible since the pitch conversion for the external terminals of thesemiconductor device 10 is easily accomplished.

On the semiconductor chip 12 of the semiconductor device 10, a wire 2 isbonded to an electrode (not shown in the illustration) on which the wire18 is not provided, and connected to a lead 4. Finally, by sealing theentire region encompassed by the double-dot-and-dash line in theillustration with plastic, the semiconductor device 1 is obtained.

According to the present embodiment, a new integrated circuit can beeasily formed by combining the existing bare chip 20 with thesemiconductor device 10. As examples of the specific functions of thesemiconductor device 10 and the bare chip 20, combinations such as alogic device and a memory device (RAM), a CPU and a memory device(SRAM), and the like can be mentioned.

Although a “QFP” packaging form is mentioned in the present embodimentby way of example, the form of packaging is not limited thereto.

While it is preferred that the present invention is applied tosemiconductor devices of different types, it could well be appliedequally to semiconductor devices of the same type.

Second Embodiment

FIG. 2 shows a circuit board with a semiconductor device mounted inaccordance with the second embodiment. The semiconductor device 3 shownin the figure is an integrated type device comprising a semiconductordevice 30 having a stress relieving layer 31 and a bare chip 32 as asemiconductor device. The main configuration and the connecting methodsfor the semiconductor device 30 and the bare chip 32 are the same aswith the semiconductor device 10 and the bare chip 20 as shown in FIG.1. Additionally, a wire 34 of the semiconductor device 30 is mounted ona circuit board 38 through a solder bump 36.

Note that the electrode-mounted side and the bare chip 32 side arepreferably protected with a resin 51.

The present embodiment, mentioned by way of example, is aimed atachieving a spacing pitch conversion between the first semiconductordevice and the second semiconductor device in addition to relievingstress between them. In other words, the preferable circumstances forthe application of the present embodiment are instances where there isonly a small difference in the thermal expansion coefficient from thatof the circuit board, or operated only in an environment withinsignificant temperature fluctuations.

Third Embodiment

FIG. 3 shows a circuit board with a semiconductor device mounted inaccordance with the third embodiment. The semiconductor device 5 shownin the figure is an integrated type device comprising a semiconductordevice 40 and a bare chip 42 as a semiconductor device. The presentembodiment is configured so that stress between the device and a circuitboard 48 can be relieved.

On the semiconductor device 40, a stress relieving layer 41 with a lowYoung's modulus is provided in the region avoiding the electrode 45, ina similar fashion as the semiconductor device 10 shown in FIG. 1. On thestress relieving layer 41, a pad 44 is formed at a wire led from anelectrode (not shown in the illustration) and is connected to the barechip 42 through a bump 43 formed on the pad 44. Also on the stressrelieving layer 41, a wire 46 led from the electrode 45 is formed, thewire 46 being connected to the circuit board 48 through a bump 47. Morespecifically, a pad is also formed on the wire 46 to build the bump 47thereon.

Note that the electrode-mounted side and the bare chip 42 side arepreferably protected with a resin 51.

According to the present embodiment, the stress caused by the differencein thermal expansion coefficients between the semiconductor device 40and the circuit board 48 is relieved by the stress relieving layer 41provided on the semiconductor device 40. Furthermore, since the wire 44is formed on the stress relieving layer 41, it is easily adaptable and,even when a ready-made product is used as the bare chip 42, noredesigning of the semiconductor device 40 is required.

Fourth Embodiment

FIGS. 4A and 4B show a semiconductor device in accordance with thefourth embodiment, wherein FIG. 4B is a plain view and FIG. 4A is across sectional view of FIG. 4B through the A—A plane. The semiconductordevice 50 shown in the figure is an integrated type device comprising asemiconductor device 52 and two bare chips 54 as semiconductor devices.As specific function for the device, a combination of a logic device, amemory device (RAM), and a CPU can be mentioned by way of example.

The semiconductor device 50 has a configuration similar to thesemiconductor device 10 shown in FIG. 1. Namely, a stress relievinglayer 62 is provided on the surface having an electrode 60 of asemiconductor chip 58 and in the region avoiding the electrode 60, whilea wire 64 is formed across the electrode 60 and the stress relievinglayer 62. On top of the wire 64 above the stress relieving layer 62, asolder bump 66 is formed.

Further, in the semiconductor device 50, a pad 68 is formed on wires ledfrom a plurality of electrodes not shown in the illustration, the padbeing connected to an electrode 72 of the bare chip 54 through a bump70. Note that the side having the electrode 72 and the bare chip 54 sideare preferably protected with a resin 51.

Additionally, on the wire 64 of the semiconductor device 50 a solderresist layer 74 is provided while avoiding the bump 66. The solderresist layer 74 acts as an oxidation preventive coating and also as aprotective coating for the integrated type semiconductor device as aneventual product, or provides for a top coat aimed at improving themoisture proofing property of the product.

While two bare chips 54 are connected to the semiconductor device 52 inthe present embodiment, three or more bare chips 54 may also beconnected. Such a multi-chip module (MCM) that forms circuits with aplurality of bare chips can be easily designed by forming the a wire 68on top of the stress relieving layer 64.

Fifth Embodiment

FIG. 5 shows a semiconductor device in accordance with the fifthembodiment. The semiconductor device 80 shown in the figure is anintegrated type device wherein a semiconductor device 90 is connected toanother semiconductor device 92. Namely, a stress relieving layer 86 isprovided on the surface having an electrode 84 of a semiconductor chip82 and in the region avoiding the electrode 84, while a wire 88 isformed across the electrode 84 and the stress relieving layer 86. On topof the wire 88 above the stress relieving layer 86, a bump 89 is formed.Thus, the semiconductor device 90 is designed to relieve the stressapplied to the bump 89 by means of the stress relieving layer 86. Notethat the wire 88 is protected by a solder resist layer 87.

Further, in the semiconductor device 90, a pad 81 is formed on wires ledfrom a plurality of electrodes not shown in the illustration, the padbeing bonded to a wire 91 of the semiconductor device 92 through a bump85. More specifically, a pad formed on the wire 91 is bonded to the pad81. Similarly with the semiconductor device 90, the semiconductor device92 has also a stress relieving layer 94. Note that the electrode-mountedside and the side end of the semiconductor device 92 are preferablyprotected with a resin 93.

If the fabricating steps are arranged such that the bump 85 is preparedin advance either on the pad 81 of the semiconductor device 90 or on thepad on top of the wire 91 of the semiconductor device 92, the bumpformation is required only on one side, dispensing with the connectingbump on the other side to save fabricating steps as well as cost.

As with other embodiments, the pad 81 is formed on the stress relievinglayer 86 and therefore is easily designed according to the presentembodiment.

Sixth Embodiment

FIG. 6 shows a semiconductor device in accordance with the sixthembodiment. The semiconductor device 100 shown in the figure isconstituted of a semiconductor device 102 to which a bare chip 104 as asemiconductor device and a semiconductor device 106 are connected.

In the present embodiment, since the bare chip 104 is similar to thebare chip 54 shown in FIG. 4A, and the semiconductor device 106 to thesemiconductor device 92 shown in FIG. 5, descriptions of these areomitted.

The semiconductor device 102 differs from the semiconductor device 90shown in FIG. 5 with regard to the configuration of the stress relievinglayer 108. As illustrated in FIG. 6, the stress relieving layer 108 isformed only in the region for forming a bump 112 on a semiconductor chip110 of the semiconductor device 102. On the semiconductor chip 110, thestress relieving layer 108 is not provided in the central region (theregion for forming active elements) wherein the bare chip 104 and thesemiconductor device 106 are to be connected. Therefore, on the surfaceof the semiconductor chip 110 where the bare chip 104 and thesemiconductor device 106 are to be connected, a pad 114 is formed on awire led from an electrode (not shown in the illustration) with an aimof connecting the semiconductor device 102 to the bare chip 104 as wellas the semiconductor device 106. Note that an isolation layer is formedunderneath the pad 114. Moreover, the electrode-mounted side as well asthe side end of the bare chip 104 and the semiconductor device 106 arepreferably covered with protective a resin 105.

According to the present embodiment, the yield loss due to defectiveformation of the stress relieving layer 108 can be reduced since thestress relieving layer 108 is formed only in the region of the bump 112for connection with the circuit board (not shown in the illustration).While the present embodiment provides a configuration in which both thebare chip 104 and the semiconductor device 106 with capability for pitchconversion and stress relieving, are connected, it is also possible toconfigure by connection of only one of the above-mentioned devices.

Seventh Embodiment

FIG. 7 shows a semiconductor device in accordance with the seventhembodiment. The semiconductor device 120 shown in the figure is thesemiconductor device 50 as shown in FIG. 4 attached with a heat sink122. As the heat sink, a commonly known device is used. Also, heatconductive adhesive 124 is used to bond the semiconductor device 50 andthe heat sink 122.

According to the present embodiment, the heat sink 122 improves the heatreleasing performance of the device to permit an MCM configuration evenfor a highly integrated circuit with high heat discharge.

Other Embodiments

FIGS. 8 through 11 illustrate the steps of fabricating a semiconductordevice in accordance with the present invention.

The semiconductor device 130 shown in FIG. 8 is an integrated typedevice comprising a semiconductor device 132 and a bare chip 134 as asemiconductor device.

The semiconductor device 132 has a configuration similar to that of thesemiconductor device 52, shown in FIG. 4, except that a gold (Au) platedlayer 138 is provided on a pad 136 formed on a wire led from anelectrode (not shown in the illustration). Note that FIG. 8 shows thesemiconductor device 132 prior to forming the solder resist layer 74shown in FIG. 4. Also, the gold plated layer 138 may be provided byeither an electroplating method or an electroless plating method.

On the bare chip 134 of the present embodiment, a bump 142 comprisinggold (Au) is formed on an electrode 140 comprising aluminum (Al).

According to the present embodiment the semiconductor device 132 and thebare chip 134 are connected to form the semiconductor device 130.Specifically, the pad 136 on the semiconductor device 132 and theelectrode 140 on the bare chip 134 are bonded through the plated layer138 and the bump 142. To put it in more detail, either thermocompressionbonding utilizing the diffusion generated under a given temperature andpressure, or ultrasonic bonding utilizing plastic deformation caused byultrasonic vibration and pressure, or a combination of both is used toaccomplish the connection. Afterwards, the space between the bare chip134 and the semiconductor device 132 and also the bare chip 134 side arefilled with a resin (not shown in the illustration).

Since both the plated layer 138 and the bump 142 comprise gold (Au) theyhave a higher melting point than solder. Accordingly, with thesemiconductor device 130 of the present embodiment, even when a reflowstep is performed at a temperature equal to or slightly higher than themelting point of the solder used for mounting the device onto thecircuit board, the bond between the semiconductor device 132 and thebare chip 134 will not be broken since such a reflow temperature islower than the alloy comprising gold and solder. Thus, the reliabilityupon mounting the device onto the circuit board is improved. Note herethat metals other than gold (Au) may be used as long as the bonding isdone by metal diffusion.

Next, the semiconductor device 150 shown in FIG. 9 is an integrated typedevice comprising a semiconductor device 152 and a bare chip 154 as asemiconductor device. On the semiconductor device 152, a solder layer158 comprising an eutectic solder is coated on the surface of a pad 156for bonding with the bare chip 154. A thickness of only 5 to 20 μm isrequired for the solder layer 158. Other aspects of the configurationare the same as the semiconductor device 132 as shown in FIG. 8.Similarly with the bare chip 134 as shown in FIG. 8, a bump 162comprising gold (Au) is formed on an electrode 160 on the bare chip 154of the present embodiment. Note that when pitch conversion for the padsis required to connect the semiconductor device 152, configuration of awire on the stress relieving layer instead of on the bare chip 152 maybe adopted.

In the present embodiment, similarly with the aforementioned embodimentas shown in FIG. 8, the semiconductor device 152 and the bare chip 154are bonded with thermocompression bonding or ultrasonic bonding, or witha combination of both. With such methods, gold (Au) comprised in thebump 162 diffuses into the solder layer 158 to raise the remeltingtemperature. Afterwards, the space between the bare chip 154 and thesemiconductor device 152 and also the bare chip 154 side are filled witha resin (not shown in the illustration).

Thus, remelting of the junction is prevented at the time a reflow stepis performed and the reliability of mounting the device onto the circuitboard is improved.

Next, the semiconductor device 170 shown in FIG. 10 is an integratedtype device comprising a semiconductor device 172 and a bare chip 174 asa semiconductor device. On the semiconductor device 172, a flux isapplied onto and around a pad 176 for bonding with the bare chip 174.Note that the pad 176 comprises a metal such as nickel (Ni), copper(Cu), and the like. Afterwards, the flux is removed by washing. Then thespace between the bare chip 174 and the semiconductor device 172, andalso the bare chip 174 side are filled with a resin (not shown in theillustration).

On the electrode 180 of the bare chip 174, a bump 182 comprising solderis formed. The solder constituting the bump 182 has a melting point thatis higher than the one used for mounting the semiconductor device 170onto the circuit board.

According to the present embodiment, since the solder for bonding thesemiconductor device 172 and the bare chip 174 has a higher meltingpoint than the one for mounting the device, remelting of the junction isprevented when a reflow step is performed, thereby improving thereliability of mounting the device onto the circuit board.

Next, the semiconductor device 190 shown in FIG. 11 is an integratedtype device comprising a semiconductor device 192 and a bare chip 194 asa semiconductor device. The semiconductor device 192 has a pad 196 forbonding with the bare chip 194. Specifically, a pad with a comparativelywide area is formed in a monolithic fashion with the pad 196. The barechip 194 has a bump 198 for bonding with the semiconductor device 192,bump 198 is to be bonded with the pad formed on the pad 196.

Additionally, in embodiments excluding the one shown in FIG. 1,defective connections occurring in other sections at the time ofmounting the device onto the circuit board can be avoided, if theexternal terminals (such as the bump 36 and the like) are formed with alow melting point solder while the connecting sections between thesemiconductor devices (such as the bump 43 and the like) are formed witha higher melting point solder; or alternatively, bumps at the connectingsections are sealed by material such as a resin after bonding, even if asolder of the same type is used for both of the above-mentioned parts.

The pad 196 comprises nickel (Ni), platinum (Pt), gold (Au) or chrome(Cr) and the like, and the bump 198 comprises copper (Cu) and the like.

In the present embodiment, an anisotropic conductive layer 200containing thermosetting adhesive is used to bond the pad 196 and thebump 198 together. Namely, the anisotropic conductive layer 200 isplaced between the pad 196 and the bump 198 to bond the two together.

In accordance with the present embodiment, since the anisotropicconductive layer 200 which bonds the semiconductor device 192 and thebare chip 194 hardens at an elevated temperature during a reflow step,preventing the junction from disconnecting, thereby to improve thereliability of mounting the device onto the circuit board. Note that aconductive or nonconductive adhesive may be used in place of theanisotropic conductive layer 200 in the present embodiment.

FIGS. 12 through 14 show examples of variations of individualsemiconductor devices constituting integrated type semiconductordevices. The following descriptions can apply to both the firstsemiconductor device and the second semiconductor device of the presentinvention.

The semiconductor device 230 shown in FIG. 12 has a wire 238 preparedunderneath a stress relieving layer 236. More specifically, the wire 238is formed across an electrode 234 on a semiconductor chip 232 and overan interposing oxide film as a dielectric layer (not shown in theillustration), on which structure the stress relieving layer 236 isprepared. Note that the wire 238 comprises chrome (Cr).

On the stress relieving layer 236, a hole 236 a is formed byphotolithography so that the stress relieving layer 236 does not coverthe wire 238 at the region where the hole 236 a is prepared. In otherwords, the hole 236 a is formed so that the wire 238 is positioneddirectly underneath the hole 236 a. Furthermore, a chrome (Cr) layer 242and a copper (Cu) layer 244 are provided by sputtering across the wire238, the inner surface of circumference that constitutes the hole 236 a,and the periphery of the opening edge. In short, the chrome (Cr) layer242 and the copper (Cu) layer 244 are provided so that they piercethrough the stress relieving layer 236. Moreover, the chrome (Cr) layer242 and the copper (Cu) layer 244 are prepared to spread to acomparatively wide area at the periphery of the opening edge.

On the copper (Cu) layer 244, a pedestal 246 comprising copper (Cu) isformed and a solder ball (external electrode) 240 is formed on thepedestal 246. The solder ball (external electrode) 240 is electricallyconnected to the wire 238 through the chrome (Cr) layer 242, the copper(Cu) layer 244, and the pedestal 246. In other words, the chrome (Cr)layer 242, the copper (Cu) layer 244, and the pedestal 246 provides aconnecting section for the device.

According to the present embodiment, the stress transfer section 248comprising at least a portion of the chrome (Cr) layer 242, the copper(Cu) layer 244, and the pedestal 246 acts to transfer stress from thesolder ball 240 to the stress relieving layer 236. The stress transfersection 248 is located at a peripheral area outside of a connectingsection 238 a.

In the present variation, the stress transfer section 248 is built witha flange-like section 248 a (i.e. the protruded part) as its integralpart. Therefore, the stress transfer section 248 can transfer stressworking to tilt the central axis of the solder ball 240 to the stressrelieving layer 236 through a wide area. The wider the stress transfersection 248, the more effectively it works.

According to the present variation, since the stress transfer section248 is located at an elevation different from that of the connectingsection 238 a for the wire 238, and also the connecting section 238 aand the wire 238 are located on the hard oxide film, any stressgenerated is absorbed by the stress relieving layer 236. Since the abovearrangement hinders the transfer of stress to the connecting section 238a and further to the wire 238, it helps prevent cracks from occurring.

Next, the semiconductor device 310 shown in FIG. 13 is a CSP type devicecomprising a stress relieving layer 316 and a wire 318 formed thereon.More specifically, on an active surface 312 a of a semiconductor chip312, the stress relieving layer 316 is formed while avoiding anelectrode 314, whereas the wire 318 is formed across the electrode 314and the stress relieving layer 316.

In the above arrangement, the stress relieving layer 316 comprises apolyimide resin which acts to relieve the stress generated when thesemiconductor device 310 is mounted onto a mounting board (not shown inthe illustration), due to a difference in the thermal expansioncoefficients between the semiconductor chip 312 and the circuit board.Moreover, the polyimide resin has a dielectric property to protect theactive surface 312 a of the semiconductor chip 312 against the wire 318,and also thermal resistance to protect the surface during melting of thesolder when mounting the device. Among various polyimide resins, it ispreferable to use one with a low Young's modulus (such as an olefin typepolyimide resin, BCB, a product of Dow Chemical, and the like), and itis particularly preferred that the Young's modulus is about 40 to 50kg/mm². While the stress handling capability of the stress relievinglayer 316 increases with its thickness, it is preferably prepared to athickness between 1 to 100 μm, in consideration of the size of thesemiconductor device and the manufacturing cost. However, when apolyimide resin having Young's modulus in the level of 40 to 50 kg/mm²is used, a thickness of about 10 μm is sufficient.

Alternatively, as the stress relieving layer 316, any material having alow Young's modulus and therefore capable of relieving stress including,for example, silicone-modified polyimide resins, epoxy resins,silicone-modified epoxy resins, and the like may be used. Another optionmay be to provide a passivation layer (comprising SiN, SiO₂, and thelike) in place of the stress relieving layer 316, allowing a flexingsection 320 to relieve the stress (to be described later). In this case,the stress relieving layer 316 may be used as a supplementary role.

The wire 318 of the present variation comprises chrome (Cr). In thisrespect, the chrome (Cr) has been chosen because of its good adhesionwith the polyimide resin that constitutes the stress relieving layer316. Alternatively, aluminum or an aluminum alloy such asaluminum-silicon, aluminum-copper, and the like, or a spreadable (withan extendable property) metal such as copper (Cu) or gold may be chosenin consideration of anti-cracking performance. Another option is tochoose titanium or titanium tungsten that is excellent in moistureresistance property to prevent wire breakage due to corrosion. Titaniumis also favored in regard to adhesion to polyimide. Additionally, thewire may be formed with two or more layers by combining of theabove-mentioned metals.

On the wire 318, a connecting section 319 is formed on which a flexingsection 320 is formed with a sectional area smaller than the connectingsection 319. The flexing section 320 comprises a metal such as copper, along and narrow shape, standing within the active surface 312 a, andapproximately perpendicular to the active surface. Because of itsslender shape, the flexing section 320 is able to bend, as shown withthe double-dot-and-dash line in the illustration.

At the tip of the flexing section 320 an external electrode section 322is formed. The external electrode section 322 is provided for electricalconnection between the semiconductor device 310 and the mounting board(not shown in the illustration), and therefore may be prepared withattachments such as a solder ball. The external electrode section 322 isprepared with dimensions that enable the electrical connection with themounting board or the attachment of a solder ball. Alternatively, thetip portion of the flexing section 320 may be prepared as the externalelectrode section 322.

Further, on top of the wire 318 and the stress relieving layer 316, asolder resist 324 is provided so that it covers the entire structureabove the active surface 312 a. The solder resist 324 acts to protectthe wire 318 and the active surface 312 a from corrosion or otherdamages.

According to the present embodiment, the external electrode section 322is designed to shift position as the flexing section 320 bends anddeforms. With such a mechanism, any thermal stress applied to theexternal electrode section 322 of the semiconductor device 310 isabsorbed in the deformation of the flexing section 320. In other words,the flexing section 320 provides for a stress relieving structure.

While the stress relieving layer 316 is prepared in the presentembodiment, since the flexing section 320 is prepared in such a way thatit is more flexible than the stress relieving layer 316, the flexingsection 320 alone is able to absorb thermal stresses. Accordingly,absorption of thermal stresses can be accomplished even with aconfiguration wherein the stress relieving layer 316 is replaced with alayer (such as a simple dielectric layer or a protective layer)comprising a material that has no stress relieving capability.

Next, the semiconductor device 410 shown in FIG. 14 comprises asemiconductor chip 412 and a dielectric film 414 on which an externalconnection terminal 416 is prepared. The semiconductor chip 412 isprovided with a plurality of electrodes 413. While in the presentembodiment the electrodes 413 are formed only on the two opposing sidesof the chip, as is well known to those skilled in the art, they may beformed on all four sides of a chip.

Specifically, the dielectric film 414 comprises a material such aspolyimide resin and has a wiring pattern 418 formed on one side. Also,on the dielectric film 414, a plurality of contact holes 414 a areprepared through which the external connection terminal 416 is formedover the wiring pattern 418. Accordingly, the external connectionterminal 416 is designed to protrude out the opposite side of the wiringpattern 418. The external connection terminal 416 comprises a materialsuch as solder, copper, nickel or others and is fabricated into aspherical shape.

On each of the wiring pattern 418, a convex portion 418 a is formed in aone-to-one correspondence with each of the electrodes 413 of thesemiconductor chip 412. Therefore, if the electrodes 413 are arranged onfour sides of the semiconductor chip 412 along its outer perimeter, theconvex portion 418 a is also arranged in the same manner. The electrode413 is electrically connected to the convex portion 418 a so that itconducts with the external connection terminal 416 through the wiringpattern 418. Moreover, the existence of the convex portion 418 a enablesa wide clearance between the dielectric film 414 and the semiconductorchip 412, or the wiring pattern 418 and the semiconductor chip 412.

In the above-described configuration, the electrical connection betweenthe electrode 413 and the convex portion 418 a is achieved by using ananisotropic conductive layer 420. The anisotropic conductive layer 420is prepared by dispersing fine metallic particles (conductive particles)into a resin, which is made into a sheet-like form. When the anisotropicconductive layer 420 is compressed between the electrode 413 and theconvex portion 418 a, the fine metallic particles (conductive particles)are also compressed to establish an electrical connection between thetwo. It is noted here that, with the anisotropic conductive layer 420,electrical conduction is established only in the direction to which thefine metallic particles (conductive particles) are compressed.Therefore, even if a sheet form anisotropic conductive layer 420 isprovided over a plurality of electrodes 413, electrical conduction doesnot occur between any two juxtaposing electrodes 413.

While the anisotropic conductive layer 420 in the present embodiment isprovided between the electrode 413 and the convex portion 418 a and itsvicinity, it may be limited only to the area between the electrode 413and the convex portion 418 a. Additionally, within the clearance betweenthe dielectric film 414 and the semiconductor chip 412, a stressrelieving section 422 is formed to provide a stress relieving structure.The stress relieving section 422 is formed by injecting a resin througha gel injection hole 424 prepared on the dielectric film 414.

As for the resin constituting the stress relieving section 422,materials having a low Young's modulus and thus capable of relievingstress are used. For such materials, polyimide resins, silicone resins,silicone-modified polyimide resins, epoxy resins, silicone-modifiedepoxy resins, acrylic resins and the like can be mentioned by way ofexample. Accordingly, the stress relieving section 422 can relieveoutside stress applied to the external connection terminal 416.

The following is a description of the principal steps of fabricate thesemiconductor device 410 of the present embodiment. First, contact holes414 a for external connection terminals 416 and gel injection holes 424are prepared on a dielectric film 414. Subsequently, a copper foil ispasted onto the dielectric film 414 and then etched to form a wiringpattern 418, thereupon the area for forming convex portions 418 a ismasked and the remaining area is etched to make it thinner. Removing theaforementioned mask thus leaves the convex portions 118 a.

Further, over the convex portions 418 a on top of the dielectric film,an anisotropic conductive layer 420 is provided. More specifically, fora plurality of convex portions 418 arranged along two opposing sides,the anisotropic conductive layer 420 is affixed in two parallel lines,whereas for the convex portions 418 a lining the four sides, theanisotropic conductive layer 420 is affixed as if to draw acorresponding rectangle.

The above-mentioned dielectric film 414 is pressed upon thesemiconductor chip 412, while matching the convex portions 418 a and theelectrodes 413, so that the anisotropic conductive layer 420 iscompressed between the convex portions 418 a and the electrodes 413.Thus establishing the electrical connection between the convex portions418 a and the electrodes 413.

Subsequently, a resin is injected through the gel injection hole 424into the space between the dielectric film 414 and the semiconductorchip 412 to form the stress relieving section 422.

Finally, by applying solder on the wiring pattern 418 through thecontact holes 414 a, external connection terminals 416 are prepared in aspherical shape.

The semiconductor device 410 is fabricated in the aforementioned steps.It should be noted that, in place of the anisotropic conductive layer420 used in the present variation, an isotropic adhesive may be used. Anisotropic adhesive has a composition similar to an anisotropicconductive layer 420 except that it is not in sheet form.

Alternatively, the convex portions 418 a and the electrodes 413 may bepress fitted together by compressing a nonconductive type adhesivebetween the convex portions 418 a and the electrodes 413. Another optionis to dispense with the convex portions 418 a on the dielectric film 414and instead to use bumps comprising gold, solder, or the like preparedon the electrodes 413.

FIG. 15 illustrates the circuit board 1000 mounted with a semiconductordevice 1100 in accordance with the present invention. For the circuitboard 1000, organic type boards such as a glass-epoxy board for exampleare generally used. On the circuit board 1000, wiring patternsconstituting copper, for example, are formed to provide a desiredcircuitry. These wiring patterns are then mechanically connected withthe bumps on the semiconductor device 1100 to establish electricalconduction between them. In this instance, the semiconductor device 1100is equipped with the aforementioned structure to absorb strains causedby the thermal expansion differential between itself and an outsideunit, thereby improving the reliability of mounting the semiconductordevice 1100 of the present embodiment onto the circuit board 1000 andthereafter. Additionally, if the wire on the semiconductor device 1100is fabricated with appropriate considerations, its reliability during orafter connection can be improved. Moreover, the size of the area formounting the device can be reduced to the area required for mounting abare chip. The circuit board 1000 can therefore be used to miniaturizeelectronic appliances. Alternatively, given the same available area, awider mounting space is secured which can be utilized for advancedfunctions or performance.

While in the foregoing embodiments after the second embodiment, theflanks and the rear sides of the semiconductor chips are exposed, theseexposed parts (rear and flanks) may be covered with materials such asepoxy or polyimide resins, if damage to the semiconductor chip is anissue. Further, although solder bumps are used by way of example indescribing methods for bonding with the circuit board, bumps maycomprise gold or other metals, or protrusions using conductive resinscould as well be equally applied.

As an electronic appliance equipped with the circuit board 1000, anotebook-sized personal computer 1200 is illustrated in FIG. 16.

It should be noted that, while the above-described embodiments areexamples wherein the present invention is applied to semiconductordevices, the present invention could as well be applied equally to otherelectronic components inasmuch as they require a multitude of bumps forplanar mounting, regardless of whether they may be active components orpassive components. As examples of such electronic components,resistors, capacitors, coils, oscillators, filters, temperature sensors,thermistors, varistors, potentiometers, fuses, and others can bementioned.

The present invention, in addition to combinations between semiconductorchips, could as well be applied equally to applications combining anelectronic component and a semiconductor chip, as well as combinationsof electronic components. The stress-relieving structure may be providedeither on one side or on both sides of such combinations.

What is claimed is:
 1. An integrated type semiconductor devicecomprising: a first semiconductor device having a semiconductor chipwith first electrodes, a stress relieving structure provided on thesemiconductor chip, a plurality of wires formed from the firstelectrodes, and external electrodes formed on the stress relievingstructure and connected to any ones of the wires; and a secondsemiconductor device having second electrodes arranged with a differentspacing pitch in comparison with the first electrodes on the firstsemiconductor device, the second semiconductor device being electricallyconnected to any ones of the wires of the first semiconductor device. 2.The integrated type semiconductor device according to claim 1, whereinthe stress relieving structure comprises a stress relieving layerprovided on the semiconductor chip, the ones of the wires connected tothe external electrodes are formed extending from the first electrodesto an area on the stress relieving layer, and the external electrodesare formed on the ones of the wires connected to the external electrodeson the stress relieving layer.
 3. The integrated type semiconductordevice according to claim 2, wherein the wires connected to the secondsemiconductor device are formed on the semiconductor chip, the secondsemiconductor device comprises wires formed from the second electrodesand external electrodes formed on the wires, and the stress relievinglayer is formed in a region avoiding at least a part of the ones of thewires connected to the second semiconductor device.
 4. The integratedtype semiconductor device according to claim 2, wherein the ones of thewires connected to the second semiconductor device are formed on thestress relieving layer, and the second semiconductor device compriseswires formed from the second electrodes and external electrodes formedon the wires.
 5. The integrated type semiconductor device according toclaim 1, wherein the stress relieving structure comprises a stressrelieving layer provided on the semiconductor chip and connectingportions piercing through the stress relieving layer and transmittingstress to the stress relieving layer, the ones of the wires connected tothe external electrodes are formed beneath the stress relieving layer,and the external electrodes are formed on the connecting portions. 6.The integrated type semiconductor device according to claim 5, whereinthe ones of the wires connected to the second semiconductor device areformed on the semiconductor chip, the second semiconductor devicecomprises wires formed from the second electrodes and externalelectrodes formed on the wires, and the stress relieving layer is formedin a region avoiding at least a part of the ones of the wires connectedto the second semiconductor device.
 7. The integrated type semiconductordevice according to claim 5, wherein the ones of the wires connected tothe second semiconductor device are formed on the stress relievinglayer, and the second semiconductor device comprises wires formed fromthe second electrodes and external electrodes formed on the wires. 8.The integrated type semiconductor device according to claim 1, whereinthe second semiconductor device is a bare chip consisting of asemiconductor chip having the second electrodes and external electrodesprepared on the second electrodes.
 9. The integrated type semiconductordevice according to claim 1, wherein the second semiconductor devicecomprises a semiconductor chip having the second electrodes, a stressrelieving layer provided on the semiconductor chip, wires formedextending from the second electrodes to an area on the stress relievinglayer, and external electrodes formed on the wires on the stressrelieving layer.
 10. The integrated type semiconductor device accordingto claim 1, wherein the second semiconductor device comprises asemiconductor chip having the second electrodes, a stress relievinglayer provided on the semiconductor chip, wires formed underneath thestress relieving layer from the second electrodes, connecting portionspiercing through the stress relieving layer and transmitting stress tothe stress relieving layer, and external electrodes formed on theconnecting portions.
 11. The integrated type semiconductor deviceaccording to claim 1, wherein the second semiconductor device compriseswires formed from the second electrodes and external electrodes formedon the wires, and the external electrodes of the second semiconductordevice are electrically connected to the first semiconductor device. 12.The integrated type semiconductor device according to claim 1, furthercomprising at least one third semiconductor device electricallyconnected to the first semiconductor device.
 13. The integrated typesemiconductor device according to claim 1, further comprising: a plasticpackage to seal both the first and second semiconductor devices; andouter leads connected to the first electrodes of the first semiconductordevice.
 14. The integrated type semiconductor device according to claim1, wherein the first semiconductor device is equipped with a radiatorattached to a side opposite of a side to which the second semiconductordevice is connected.
 15. A circuit board on which the integrated typesemiconductor device according to of claim 1 is mounted.
 16. Anelectronic appliance comprising the circuit board according to claim 15.17. An integrated type electronic component comprising: a firstelectronic component having an element chip with first electrodes, astress relieving structure provided on the element chip, a plurality ofwires formed from the first electrodes, and external electrodes formedon the stress relieving structure and connected to any ones of thewires; and, a second electronic component having second electrodesarranged with a different spacing pitch in comparison with the firstelectrodes on the first electronic component, the second electroniccomponent being electrically connected to any ones of the wires of thefirst electronic component.
 18. A method of making an integrated typeelectronic component comprising steps of electrically connecting to afirst electronic component a second electronic component, the firstelectronic component having an element chip with first electrodes, astress relieving structure provided on the element chip, a plurality ofwires formed from the first electrodes, and external electrodes formedon the stress relieving structure and connected to any ones of thewires, and the connection being achieved through any ones of the wires.19. A method of making an integrated type semiconductor devicecomprising steps of electrically connecting to a first semiconductordevice a second semiconductor device, the first semiconductor devicehaving a semiconductor chip with first electrodes, a stress relievingstructure provided on the semiconductor chip, a plurality of wiresformed from the first electrodes, and external electrodes formed on thestress relieving structure and connected to any ones of the wires, andthe connection being achieved through any ones of the wires.
 20. Themethod of making an integrated type semiconductor device according toclaim 19, wherein the ones of the wires connected to the secondsemiconductor device have pads and are formed on the semiconductor chip;the stress relieving structure comprises a stress relieving layerprovided in a region avoiding the pads; the second semiconductor devicehas second electrodes, wires formed from the second electrodes, andexternal electrodes formed on the wires; and the external electrodes ofthe second semiconductor device are connected to the pads of the firstsemiconductor device.
 21. The method of making an integrated typesemiconductor device according to claim 20, wherein at least ones of thepads of the first semiconductor device and the external electrodes ofthe second semiconductor device are made from solder having a highermelting point than that for mounting use onto a circuit board.
 22. Themethod of making an integrated type semiconductor device according toclaim 20, wherein the pads of the first semiconductor device and theexternal electrodes of the second semiconductor device are made frommetal having a higher melting point than that of solder.
 23. The methodof making an integrated type semiconductor device according to claim 20,wherein sides of ones of the pads of the first semiconductor device andthe external electrodes of the second semiconductor device are made fromsolder and sides of others are made from metal having a higher meltingpoint than that of solder.
 24. The method of making an integrated typesemiconductor device according to claim 20, wherein between the externalelectrodes of the second semiconductor device and the pads of the firstsemiconductor device, an anisotropic conductive layer containingthermosetting adhesive is placed; and through the anistropic conductivelayer, the pads of the first semiconductor device and the externalelectrodes of the second semiconductor device are bonded.
 25. The methodof making an integrated type semiconductor device according to claim 19,wherein the stress relieving structure comprises a stress relievinglayer provided on the semiconductor chip; the ones of the wiresconnected to the second semiconductor device have pads and are formed onthe stress relieving layer; the second semiconductor device comprisessecond electrodes, wires formed from the second electrodes, and externalelectrodes formed on the wires; and the external electrodes of thesecond semiconductor device are connected to the pads of the firstsemiconductor device.